Aluminum Nitride Substrate

Mullite substrate (3 a1203. 2Si02): is one of the most stable crystal phases in the A1203-Si02 binary system, although mechanical strength and thermal conductivity are low compared to A1203, but its dielectric constant Low, so it is expected to further improve the signal transmission speed. The coefficient of thermal expansion is also low, which can reduce the thermal stress of the LSI, and the difference in the coefficient of the thermal expansion of the conductor material Mo, W is small, thereby having a low stress between the conductor during cycling.

Aluminum nitride substrate:
a. Raw material: AIN is a non-natural presence but a artificial mineral in 1862, was first synthesized by Genther et al. The representation of the representation of the Aln powder is to reduce the nitride method and the direct nitridation method. The former is reacting with a high purity carbon reduction in A1203, and then reacts with nitrogen, and the latter is directly Nitriding. ;

b. Manufacturing method: A1203 substrate manufacturing can be used in the manufacture of AIN substrates, wherein the maximum use of the organic lamination method, that is, the AIN raw material powder, an organic adhesive, and a solvent, surfactant mixed Ceramic slurry, passed, laminate, hot press, degreasing, burnning

C. The characteristics of the AIN substrate: AIN is more than 10 times, and CTE matches the silicon wafer. The AIN material is relatively related to the A1203, the insulation resistance, the insulation, and the dielectric constant is lower. These features are very rare for packaging substrate applications;

d. Application: Used for VHF (Ultra High Frequency) Frequency Belt Power Amplifier Module, High Power Device, and Laser Diode Substrate.